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Preliminary Datasheet
RJK5026DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
* Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) * Low leakage current * High speed switching
R07DS0360EJ0200 (Previous: REJ03G1734-0100) Rev.2.00 Apr 15, 2011
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. Source
1
23
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW 10 s, duty cycle 1% Value at Tc = 25C STch = 25C, Tch 150C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 500 30 6 18 6 18 4 0.88 28.5 4.38 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
Page 1 of 6
RJK5026DPP
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.35 440 52 7 26 19 50 14 14 2.5 6.9 0.95 230 Max -- 1 0.1 4.5 1.70 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note5 VDS = 25 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 83.3 Rg = 10 VDD = 400 V VGS = 10 V ID = 6 A IF = 6 A, VGS = 0 Note5 IF = 6 A, VGS = 0 diF/dt = 100 A/s
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
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RJK5026DPP
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
10 Ta = 25C Pulse Test 7 V, 8 V, 10 V 6V
Drain Current ID (A)
PW
Drain Current ID (A)
10
= 10
s
8
5.8 V
6
1
0
s
5.6 V
4
0.1
Operation in this area is limited by RDS(on) Ta = 25C 1 shot 1 10 100 1000
5.4 V 5.2 V VGS = 5 V
0.01
2
0.001 0.1
0
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) ()
10 VGS = 10 V Ta = 25C Pulse Test
Typical Transfer Characteristics
10 VDS = 10 V Pulse Test
Drain Current ID (A)
8
Tc = -25 C 25 C
6
75 C
4
1
2
0
0.1 1 2 5 10
0
2
4
6
8
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
VGS = 10 V Pulse Test 4 ID = 6 A 3
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time (Typical)
1000
Reverse Recovery Time trr (ns)
5
100
2 3A 1 1.5 A
di / dt = 100 A / s VGS = 0, Ta = 25C 10 0.1 1 10 100
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Reverse Drain Current IDR (A)
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
Page 3 of 6
RJK5026DPP
Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
1000 Ciss
Preliminary
Dynamic Input Characteristics (Typical)
ID = 6 A Ta = 25 C VDD = 400 V 250 V 100 V VGS
600
12
100 Coss 10 Crss VGS = 0 f = 1 MHz 50 Ta = 25C 100 150 200 250
400
VDS
8
200
VDD = 400 V 250 V 100 V 4 8 12 16
4
1 0
0 20
0
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
10
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
Reverse Drain Current IDR (A)
VGS = 0 V Ta = 25 C Pulse Test
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
8
4 ID = 10 mA 1 mA 0.1 mA 2
6
3
4 2 0 0 0.4 0.8 1.2 1.6 2.0
1
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
Page 4 of 6
Gate to Source Voltage VGS (V)
800
16
Capacitance C (pF)
RJK5026DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10 Tc = 25C
Preliminary
1
D=1 0.5
0.2
0.1 0.05 0.1 0.02
0.01 1shot pulse
ch - c(t) = s (t) * ch - c ch - c = 4.38C/W, Tc = 25C PDM PW T 1m 10 m 100 m 1 10 100 1000 D= PW T
0.01 10
100
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 250 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
Page 5 of 6
RJK5026DPP
Preliminary
Package Dimensions
Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g
Unit: mm
10 0.3
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Orderable Part Number RJK5026DPP-00-T2 RJK5026DPP-E0-T2 Quantity 1050 pcs 1050 pcs Shipping Container Box (Tube) Box (Tube)
R07DS0360EJ0200 Rev.2.00 Apr 15, 2011
2.6 0.2
4.5 0.2
6.5 0.3
3 0.3
Page 6 of 6
Notice
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